DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Dohyun | ko |
dc.contributor.author | Lim, Sung Kwan | ko |
dc.contributor.author | Bae, Hagyoul | ko |
dc.contributor.author | Kim, Choong-Ki | ko |
dc.contributor.author | Lee, Seung-Wook | ko |
dc.contributor.author | Seo, Myungsoo | ko |
dc.contributor.author | Kim, Seong-Yeon | ko |
dc.contributor.author | Hwang, Kyu-Man | ko |
dc.contributor.author | Lee, Geon-Beom | ko |
dc.contributor.author | Lee, Byoung Hun | ko |
dc.contributor.author | Choi, Yang-Kyu | ko |
dc.date.accessioned | 2018-04-24T06:33:23Z | - |
dc.date.available | 2018-04-24T06:33:23Z | - |
dc.date.created | 2018-04-18 | - |
dc.date.created | 2018-04-18 | - |
dc.date.issued | 2018-04 | - |
dc.identifier.citation | IEEE TRANSACTIONS ON ELECTRON DEVICES, v.65, no.4, pp.1640 - 1644 | - |
dc.identifier.issn | 0018-9383 | - |
dc.identifier.uri | http://hdl.handle.net/10203/241420 | - |
dc.description.abstract | Deuterium (D-2) annealing was applied to a poly-crystalline silicon thin-film transistor (poly-Si TFT) to improve reliability and performance. The field-effect electron mobility (mu) was extracted using the gate transconductance (gm) method. It was found that mu was improved before and after D-2 annealing. The interface trap density (D-it) as well as the oxide trap density (N-ot) in the poly-Si TFTs was quantitatively extracted using both conventional dc I-V characterization and analysis of low frequency noise (LFN). The profile of N-ot along the depth direction was investigated before and after D-2 annealing using LFN characteristics. It was confirmed that D-it as well as N-ot was reduced by the D-2 annealing, resulting in a reduction in power spectral density and variation. | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject | THIN-FILM TRANSISTORS | - |
dc.subject | 1/F NOISE | - |
dc.subject | HYDROGEN PASSIVATION | - |
dc.subject | SILICON | - |
dc.subject | INTERFACE | - |
dc.subject | DEFECTS | - |
dc.subject | DENSITY | - |
dc.title | Quantitative Analysis of Deuterium Annealing Effect on Poly-Si TFTs by Low Frequency Noise and DC I-V Characterization | - |
dc.type | Article | - |
dc.identifier.wosid | 000427856300055 | - |
dc.identifier.scopusid | 2-s2.0-85042848246 | - |
dc.type.rims | ART | - |
dc.citation.volume | 65 | - |
dc.citation.issue | 4 | - |
dc.citation.beginningpage | 1640 | - |
dc.citation.endingpage | 1644 | - |
dc.citation.publicationname | IEEE TRANSACTIONS ON ELECTRON DEVICES | - |
dc.identifier.doi | 10.1109/TED.2018.2805316 | - |
dc.contributor.localauthor | Choi, Yang-Kyu | - |
dc.contributor.nonIdAuthor | Lim, Sung Kwan | - |
dc.contributor.nonIdAuthor | Lee, Seung-Wook | - |
dc.contributor.nonIdAuthor | Hwang, Kyu-Man | - |
dc.contributor.nonIdAuthor | Lee, Geon-Beom | - |
dc.contributor.nonIdAuthor | Lee, Byoung Hun | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Dangling bond | - |
dc.subject.keywordAuthor | deuterium (D-2) | - |
dc.subject.keywordAuthor | field-effect mobility (mu) | - |
dc.subject.keywordAuthor | hydrogen passivation | - |
dc.subject.keywordAuthor | interface trap density (D-it) | - |
dc.subject.keywordAuthor | low frequency noise (LFN) | - |
dc.subject.keywordAuthor | oxide trap density (N-ot) | - |
dc.subject.keywordAuthor | poly-crystalline silicon thin-film transistor (poly-Si TFT) | - |
dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
dc.subject.keywordPlus | 1/F NOISE | - |
dc.subject.keywordPlus | HYDROGEN PASSIVATION | - |
dc.subject.keywordPlus | SILICON | - |
dc.subject.keywordPlus | INTERFACE | - |
dc.subject.keywordPlus | DEFECTS | - |
dc.subject.keywordPlus | DENSITY | - |
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