Highly Stable AlInZnSnO and InZnO Double-Layer Oxide Thin-Film Transistors With Mobility Over 50 cm(2)/ V.s for High-Speed Operation

We present high-mobility back channel etch Al-In-Zn-Sn-O/In-Zn-O (IZO) double-layer channel thin-film transistors (TFTs). The field-effect mobility of 53.2 cm(2)/V.s, threshold voltage of 0.5 V, and subthreshold swing of 0.15 V/decade were obtained with a thin IZO-inserted double-layer channel TFT. The positive bias stability was improved with an IZO-inserted double-layer channel. We fabricated 13-stage ring oscillators, which exhibited an oscillating frequency of 296 kHz at V-DD = 20. These results demonstrate that the proposed double-layer channel oxide TFT can be used for demanding applications such as backplane devices for ultrahigh resolution display.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2018-04
Language
English
Article Type
Article
Keywords

HIGH-PERFORMANCE; SEMICONDUCTORS; STABILITY; CIRCUITS

Citation

IEEE ELECTRON DEVICE LETTERS, v.39, no.4, pp.508 - 511

ISSN
0741-3106
DOI
10.1109/LED.2018.2805705
URI
http://hdl.handle.net/10203/241415
Appears in Collection
EE-Journal Papers(저널논문)
Files in This Item
There are no files associated with this item.
  • Hit : 31
  • Download : 0
  • Cited 0 times in thomson ci
This item is cited by other documents in WoS
⊙ Detail Information in WoSⓡClick to seewebofscience_button

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0