Excellent Resistive Switching Performance of Cu-Se-Based Atomic Switch Using Lanthanide Metal Nanolayer at the Cu-Se/Al2O3 Interface

The next-generation electronic society is dependent on the performance of nonvolatile memory devices, which has been continuously improving. In the last few years, many memory devices have been introduced. However, atomic switches are considered to be a simple and reliable basis for next-generation nonvolatile devices. In general, atomic switch-based resistive switching is controlled by electrochemical metallization. However, excess ion injection from the entire area of the active electrode into the switching layer causes device nonuniformity and degradation of reliability. Here, we propose the fabrication of a high-performance atomic switch based on Cu-x-Se1-x by inserting lanthanide (Ln) metal buffer layers such as neodymium (Nd), samarium (Sm), dysprosium (Dy), or lutetium (Lu) between the active metal layer and the electrolyte. Current-atomic force microscopy results confirm that Cu ions penetrate through the Ln-buffer layer and form thin conductive filaments inside the switching layer. Compared with the Pt/Cu-x-Se1-x/Al2O3/Pt device, the optimized Pt/Cu-x-Se1-x/Ln/Al2O3/Pt devices show improvement in the on/off resistance ratio (10(2)-10(7)), retention (10 years/85 degrees C), endurance (similar to 10000 cycles), and uniform resistance state distribution.
Publisher
AMER CHEMICAL SOC
Issue Date
2018-03
Language
English
Article Type
Article
Keywords

CONDUCTIVE FILAMENT; AL2O3-BASED RRAM; MEMORY DEVICES

Citation

ACS APPLIED MATERIALS & INTERFACES, v.10, no.9, pp.8124 - 8131

ISSN
1944-8244
DOI
10.1021/acsami.7b18055
URI
http://hdl.handle.net/10203/241316
Appears in Collection
EE-Journal Papers(저널논문)
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