Trap-limited and percolation conduction mechanisms in amorphous oxide semiconductor thin film transistors

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The electron conduction mechanism in the above-threshold regime in amorphous oxide semiconductor thin film transistors is shown to be controlled by percolation and trap-limited conduction. The band tail state slope controls the field effect mobility, while the average spatial coherence length and potential fluctuation control percolation conduction. In these limits, the field effect mobility is found to follow a power law, from which a universal mobility versus carrier concentration dependence is extracted. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3589371]
Publisher
AMER INST PHYSICS
Issue Date
2011-05
Language
English
Article Type
Article
Keywords

MODEL; CRYSTALLINE; EXTRACTION; MOBILITY; SILICON

Citation

APPLIED PHYSICS LETTERS, v.98, no.20

ISSN
0003-6951
DOI
10.1063/1.3589371
URI
http://hdl.handle.net/10203/240832
Appears in Collection
EE-Journal Papers(저널논문)
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