Verification of Interface State Properties of a-InGaZnO Thin-Film Transistors With Sin(x) and SiO2 Gate Dielectrics by Low-Frequency Noise Measurements

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To verify the interface state properties of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) with SiNx and SiO2 gate dielectrics, the low-frequency noise (LFN) of various gate-length devices from 5 to 50 mu m was measured and evaluated. Before LFN measurements, the dc characteristics, such as the subthreshold slope (S), were measured for comparison. The interface state density (N-it) extracted by S for an a-IGZO TFT with SiNx gate dielectrics is only 1.3 times higher than that for an a-IGZO TFT with SiO2 gate dielectrics. However, the trap density (N-t) extracted by LFN for an a-IGZO TFT with SiNx gate dielectrics is almost 80 times higher than that for one with SiO2 gate dielectrics. Moreover, carrier number fluctuations are the dominant mechanism for LFNs in an a-IGZO TFT with SiNx gate dielectrics. This large difference between SiNx and SiO2 gate dielectrics in LFN measurement is related to the fast degradation of a-IGZO TFTs with SiN x gate dielectrics by the bias temperature instability or light illumination.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2011-08
Language
English
Article Type
Article
Citation

IEEE ELECTRON DEVICE LETTERS, v.32, no.8, pp.1083 - 1085

ISSN
0741-3106
DOI
10.1109/LED.2011.2158057
URI
http://hdl.handle.net/10203/240828
Appears in Collection
EE-Journal Papers(저널논문)
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