Unified Analytic Model for Current-Voltage Behavior in Amorphous Oxide Semiconductor TFTs

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We present a simple and semi-physical analytical description of the current-voltage characteristics of amorphous oxide semiconductor thin-film transistors in the above-threshold and sub-threshold regions. Both regions are described by single unified expression that employs the same set of model parameter values directly extracted from measured terminal characteristics. The model accurately reproduces measured characteristics of amorphous semiconductor thin film transistors in general, yielding a scatter of <4%.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2014-01
Language
English
Article Type
Article
Keywords

THIN-FILM TRANSISTORS; FIELD-EFFECT TRANSISTORS; SILICON; EXTRACTION

Citation

IEEE ELECTRON DEVICE LETTERS, v.35, no.1, pp.84 - 86

ISSN
0741-3106
DOI
10.1109/LED.2013.2290532
URI
http://hdl.handle.net/10203/240801
Appears in Collection
EE-Journal Papers(저널논문)
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