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Origin of High Photoconductive Gain in Fully Transparent Heterojunction Nanocrystalline Oxide Image Sensors and Interconnects

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dc.contributor.authorJeon, Sanghunko
dc.contributor.authorSong, Ihunko
dc.contributor.authorLee, Sungsikko
dc.contributor.authorRyu, Byungkiko
dc.contributor.authorAhn, Seung-Eonko
dc.contributor.authorLee, Eunhako
dc.contributor.authorKim, Youngko
dc.contributor.authorNathan, Arokiako
dc.contributor.authorRobertson, Johnko
dc.contributor.authorChung, U-Inko
dc.date.accessioned2018-03-21T02:53:34Z-
dc.date.available2018-03-21T02:53:34Z-
dc.date.created2018-03-07-
dc.date.created2018-03-07-
dc.date.issued2014-11-
dc.identifier.citationADVANCED MATERIALS, v.26, no.41, pp.7102 - +-
dc.identifier.issn0935-9648-
dc.identifier.urihttp://hdl.handle.net/10203/240783-
dc.description.abstractA technique for invisible image capture using a photosensor array based on transparent conducting oxide semiconductor thin-film transistors and transparent interconnection technologies is presented. A transparent conducting layer is employed for the sensor electrodes as well as interconnection in the array, providing about 80% transmittance at visible-light wavelengths. The phototransistor is a Hf-In-Zn-O/In-Zn-O heterostructure yielding a high quantum-efficiency in the visible range.-
dc.languageEnglish-
dc.publisherWILEY-V C H VERLAG GMBH-
dc.subjectTHIN-FILM TRANSISTORS-
dc.subjectTEMPERATURE FABRICATION-
dc.subjectELECTRONICS-
dc.subjectSEMICONDUCTORS-
dc.subjectARRAYS-
dc.subjectTFTS-
dc.titleOrigin of High Photoconductive Gain in Fully Transparent Heterojunction Nanocrystalline Oxide Image Sensors and Interconnects-
dc.typeArticle-
dc.identifier.wosid000344782900015-
dc.identifier.scopusid2-s2.0-84915788323-
dc.type.rimsART-
dc.citation.volume26-
dc.citation.issue41-
dc.citation.beginningpage7102-
dc.citation.endingpage+-
dc.citation.publicationnameADVANCED MATERIALS-
dc.identifier.doi10.1002/adma.201401955-
dc.contributor.localauthorJeon, Sanghun-
dc.contributor.nonIdAuthorSong, Ihun-
dc.contributor.nonIdAuthorLee, Sungsik-
dc.contributor.nonIdAuthorRyu, Byungki-
dc.contributor.nonIdAuthorAhn, Seung-Eon-
dc.contributor.nonIdAuthorLee, Eunha-
dc.contributor.nonIdAuthorKim, Young-
dc.contributor.nonIdAuthorNathan, Arokia-
dc.contributor.nonIdAuthorRobertson, John-
dc.contributor.nonIdAuthorChung, U-In-
dc.description.isOpenAccessN-
dc.type.journalArticleArticle-
dc.subject.keywordPlusTHIN-FILM TRANSISTORS-
dc.subject.keywordPlusTEMPERATURE FABRICATION-
dc.subject.keywordPlusELECTRONICS-
dc.subject.keywordPlusSEMICONDUCTORS-
dc.subject.keywordPlusARRAYS-
dc.subject.keywordPlusTFTS-
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