Origin of High Photoconductive Gain in Fully Transparent Heterojunction Nanocrystalline Oxide Image Sensors and Interconnects

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A technique for invisible image capture using a photosensor array based on transparent conducting oxide semiconductor thin-film transistors and transparent interconnection technologies is presented. A transparent conducting layer is employed for the sensor electrodes as well as interconnection in the array, providing about 80% transmittance at visible-light wavelengths. The phototransistor is a Hf-In-Zn-O/In-Zn-O heterostructure yielding a high quantum-efficiency in the visible range.
Publisher
WILEY-V C H VERLAG GMBH
Issue Date
2014-11
Language
English
Article Type
Article
Keywords

THIN-FILM TRANSISTORS; TEMPERATURE FABRICATION; ELECTRONICS; SEMICONDUCTORS; ARRAYS; TFTS

Citation

ADVANCED MATERIALS, v.26, no.41, pp.7102 - +

ISSN
0935-9648
DOI
10.1002/adma.201401955
URI
http://hdl.handle.net/10203/240783
Appears in Collection
EE-Journal Papers(저널논문)
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