Thin Ion-Gel Dielectric Layer to Enhance the Stability of Polymer Transistors

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Poly(3-hexylthiophene)(P3HT) transistors with a thin ion-gel gate dielectric layer (100 nm thickness) was fabricated. The thin ion-gel dielectric layer retarded the capacitance drop at high frequencies and the diffusion of the ionic molecules in the polymer active layer that are severe drawbacks of the ion-gel dielectric transistors. Thereby, the thin ion-gel transistors showed hysteresis-free I-V characteristics, less frequency-dependence, and enhanced bias-stability. The average charge mobility was similar to 2 cm(2)/Vs and the on/off ratio was 10(4)similar to 10(5). The dependence of the capacitance and the kinetics of ion translation on the thickness of the ion-gel were discussed by both experiments and theoretical calculations.
Publisher
AMER SCIENTIFIC PUBLISHERS
Issue Date
2015-05
Language
English
Article Type
Article
Keywords

FIELD-EFFECT TRANSISTORS; GATE DIELECTRICS; LOW-VOLTAGE; FILM TRANSISTORS; ORGANIC ELECTRONICS; INSULATOR; TRANSPORT; DENSITY; LIQUID

Citation

SCIENCE OF ADVANCED MATERIALS, v.7, no.5, pp.874 - 880

ISSN
1947-2935
DOI
10.1166/sam.2015.1890
URI
http://hdl.handle.net/10203/240779
Appears in Collection
EE-Journal Papers(저널논문)
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