Hot Carrier Trapping Induced Negative Photoconductance in InAs Nanowires toward Novel Nonvolatile Memory

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We report a novel negative photoconductivity (NPC) mechanism in n-type indium arsenide nanowires (NWs). Photoexcitation significantly suppresses the conductivity with a gain up to 10(5). The origin of NPC is attributed to the depletion of conduction channels by light assisted hot electron trapping, supported by gate voltage threshold shift and wavelength-dependent photoconductance measurements. Scanning photocurrent microscopy excludes the possibility that NPC originates from the NW/metal contacts and reveals a competing positive photoconductivity. The conductivity recovery after illumination substantially slows down at low temperature, indicating a thermally activated detrapping mechanism. At 78 K, the spontaneous recovery of the conductance is completely quenched, resulting in a reversible memory device, which can be switched by light and gate voltage pulses. The novel NPC based optoelectronics may find exciting applications in photodetection and nonvolatile memory with low power consumption.
Publisher
AMER CHEMICAL SOC
Issue Date
2015-09
Language
English
Article Type
Article
Keywords

FIELD-EFFECT TRANSISTORS; SEMICONDUCTOR NANOWIRES; PHOTODETECTORS; VOLTAGE; BAND

Citation

NANO LETTERS, v.15, no.9, pp.5875 - 5882

ISSN
1530-6984
DOI
10.1021/acs.nanolett.5b01962
URI
http://hdl.handle.net/10203/240775
Appears in Collection
EE-Journal Papers(저널논문)
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