Oxygen Defect-Induced Metastability in Oxide Semiconductors Probed by Gate Pulse Spectroscopy

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We investigate instability mechanisms in amorphous In-Ga-Zn-O transistors based on bias and illumination stress-recovery experiments coupled with analysis using stretched exponentials and inverse Laplace transform to retrieve the distribution of activation energies associated with metastable oxygen defects. Results show that the recovery process after illumination stress is persistently slow by virtue of defect states with a broad range, 0.85 eV to 1.38 eV, suggesting the presence of ionized oxygen vacancies and interstitials. We also rule out charge trapping/detrapping events since this requires a much smaller activation energy similar to 0.53 eV, and which tends to be much quicker. These arguments are supported by measurements using a novel gate-pulse spectroscopy probing technique that reveals the post-stress ionized oxygen defect profile, including anti-bonding states within the conduction band.
Publisher
NATURE PUBLISHING GROUP
Issue Date
2015-10
Language
English
Article Type
Article
Keywords

THIN-FILM TRANSISTORS; ELECTRONICS; INSTABILITY

Citation

SCIENTIFIC REPORTS, v.5

ISSN
2045-2322
DOI
10.1038/srep14902
URI
http://hdl.handle.net/10203/240773
Appears in Collection
EE-Journal Papers(저널논문)
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