Influence of Fast Charging on Accuracy of Mobility in a-InHfZnO Thin-Film Transistor
Amorphous InHfZnO (a-IHZO) thin-film devices have attracted considerable attention owing to their highmobility. However, themobility of a-IHZO thin-film transistors has not been correctly determined, because it is affected by fast charging. In this letter, we investigated the effect of transient charging on the mobility. On the basis of the pulse IDS-VGS method, we present an approach to estimate a correction factor for the measured apparent mobility, which was extracted from pulse amplitude versus threshold voltage shift.
- Issue Date
- 2017-02
- Language
- English
- Article Type
- Article
- Keywords
ELECTRON-TRAPPING CHARACTERIZATION; AMORPHOUS OXIDE SEMICONDUCTORS; V-G METHODOLOGY; GATE DIELECTRICS; TRANSPARENT; PERFORMANCE
- Citation
IEEE ELECTRON DEVICE LETTERS, v.38, no.2, pp.203 - 206
- ISSN
- 0741-3106
- Appears in Collection
- EE-Journal Papers(저널논문)
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