Defects and Charge-Trapping Mechanisms of Double-Active-Layer In-Zn-O and Al-Sn-Zn In-O Thin-Film Transistors

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Active matrix organic light-emitting diodes (AMOLEDs) are considered to be a core component of next- generation display technology, which can he used for wearable and flexible devices. Reliable thin-film transistors (TFTs) with high mobility are required to drive AMOLEDs. Recently, amorphous oxide TFTs, due to their high mobility, have been considered as excellent substitutes for driving AMOLEDs. However, the device instabilities of high-mobility oxide TFTs 0 have remained a key issue to be used in production. In this paper, 0 we present the charge-trapping and device instability mechanisms of high-mobility oxide TFTs with double active layers, using In Zn-O (IZO) and Al-doped Sn-Zn-In-O (ATZIO) with various interfacial IZO thicknesses (0-6 nm). To this end, we employed microsecond fast current voltage (I-V), single-pulsed I-V, transient current, and discharge current analysis. These alternating-current device characterization methodologies enable the extraction of various trap parameters and defect densities as well as the understanding of dynamic charge transport in double-active-layer TFTs. The results show that the number of defect sites decreases with an increase in the interfacial IZO thickness. From these results, we conclude that the interfacial IZO layer plays a crucial role in minimizing charge trapping in ATZIO TFTs.
Publisher
AMER CHEMICAL SOC
Issue Date
2017-03
Language
English
Article Type
Article
Keywords

INDIUM-ZINC-OXIDE; HIGH-PERFORMANCE; TECHNOLOGY; INTERFACE; DISPLAYS; TFTS; INSTABILITY; DIELECTRICS; GRAPHENE; VOLTAGE

Citation

ACS APPLIED MATERIALS & INTERFACES, v.9, no.11, pp.9271 - 9279

ISSN
1944-8244
DOI
10.1021/acsami.7b01533
URI
http://hdl.handle.net/10203/240752
Appears in Collection
EE-Journal Papers(저널논문)
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