Determination of intrinsic mobility of a bilayer oxide thin-film transistor by pulsed I-V method

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Amorphous oxide semiconductor thin-film transistors (TFT) have been considered as outstanding switch devices owing to their high mobility. However, because of their amorphous channel material with a certain level of density of states, a fast transient charging effect in an oxide TFT occurs, leading to an underestimation of the mobility value. In this paper, the effects of the fast charging of high-performance bilayer oxide semiconductor TFTs on mobility are examined in order to determine an accurate mobility extraction method. In addition, an approach based on a pulse I-D-V-G measurement method is proposed to determine the intrinsic mobility value. Even with the short pulse I-D-V-G measurement, a certain level of fast transient charge trapping cannot be avoided as long as the charge-trap start time is shorter than the pulse rising time. Using a pulse-amplitude-dependent threshold voltage characterization method, we estimated a correction factor for the apparent mobility, thus allowing us to determine the intrinsic mobility.
Publisher
IOP PUBLISHING LTD
Issue Date
2017-04
Language
English
Article Type
Article
Keywords

ELECTRON-TRAPPING CHARACTERIZATION; CARRIER TRANSPORT; GATE DIELECTRICS; SEMICONDUCTORS; PERFORMANCE; DEVICES

Citation

NANOTECHNOLOGY, v.28, no.17

ISSN
0957-4484
DOI
10.1088/1361-6528/aa651c
URI
http://hdl.handle.net/10203/240751
Appears in Collection
EE-Journal Papers(저널논문)
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