Influence of Nb Doping Concentration on Bolometric Properties of RF Magnetron Sputtered Nb:TiO2-x Films

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dc.contributor.authorReddy, Y. Ashok Kumarko
dc.contributor.authorShin, Young Bongko
dc.contributor.authorKang, In-Kuko
dc.contributor.authorLee, Hee Chulko
dc.date.accessioned2018-03-21T02:21:33Z-
dc.date.available2018-03-21T02:21:33Z-
dc.date.created2018-03-05-
dc.date.created2018-03-05-
dc.date.issued2018-03-
dc.identifier.citationJOURNAL OF ELECTRONIC MATERIALS, v.47, no.3, pp.2171 - 2176-
dc.identifier.issn0361-5235-
dc.identifier.urihttp://hdl.handle.net/10203/240598-
dc.description.abstractThe present study directly addresses the improved bolometric properties by means of different Nb doping concentrations into TiO2-x films. The x-ray diffraction patterns do not display any obvious diffraction peaks, suggesting that all the films deposited at room temperature had an amorphous structure. A small binding energy shift was observed in x-ray photo electron spectroscopy due to the change of chemical composition with Nb doping concentration. All the device samples exhibit linear I-V characteristics, which attests to the formation of good ohmic contact with low contact resistance between the Nb:TiO2-x (TNO) film and the electrode (Ti) material. The performance of the bolometric material can be evaluated through the temperature coefficient of resistance (TCR), and the absolute value of TCR was found to be increased from 2.54% to 2.78% with increasing the Nb doping concentration. The voltage spectral density of 1/f noise was measured in the frequency range of 1-60 Hz and found to be decreased with increase of Nb doping concentration. As a result, for 1 at.% Nb-doped TNO sample exhibits improved bolometric properties towards the good infrared image sensor device.-
dc.languageEnglish-
dc.publisherSPRINGER-
dc.subjectTIO2 THIN-FILMS-
dc.subjectSOL-GEL METHOD-
dc.subjectDOPED TIO2-
dc.subjectOPTICAL-PROPERTIES-
dc.subjectNOISE-
dc.subjectDETECTORS-
dc.subjectELEMENTS-
dc.subjectARRAYS-
dc.subjectENERGY-
dc.subjectMETAL-
dc.titleInfluence of Nb Doping Concentration on Bolometric Properties of RF Magnetron Sputtered Nb:TiO2-x Films-
dc.typeArticle-
dc.identifier.wosid000424341700048-
dc.identifier.scopusid2-s2.0-85038607446-
dc.type.rimsART-
dc.citation.volume47-
dc.citation.issue3-
dc.citation.beginningpage2171-
dc.citation.endingpage2176-
dc.citation.publicationnameJOURNAL OF ELECTRONIC MATERIALS-
dc.identifier.doi10.1007/s11664-017-6028-1-
dc.contributor.localauthorLee, Hee Chul-
dc.description.isOpenAccessN-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorNb:TiO2-x-
dc.subject.keywordAuthorsemiconductor-
dc.subject.keywordAuthormicrostructure-
dc.subject.keywordAuthorresistivity-
dc.subject.keywordAuthorbolometric properties-
dc.subject.keywordPlusTIO2 THIN-FILMS-
dc.subject.keywordPlusSOL-GEL METHOD-
dc.subject.keywordPlusDOPED TIO2-
dc.subject.keywordPlusOPTICAL-PROPERTIES-
dc.subject.keywordPlusNOISE-
dc.subject.keywordPlusDETECTORS-
dc.subject.keywordPlusELEMENTS-
dc.subject.keywordPlusARRAYS-
dc.subject.keywordPlusENERGY-
dc.subject.keywordPlusMETAL-
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