Owing to unique potential for high color purity luminance based on low-cost solution processes, organic/inorganic hybrid perovskite light-emitting diodes (PeLEDs) are attracting a great deal of research attention. For high performance PeLEDs, optimum control of the perovskite film morphology is a critical parameter. Here, we introduce a reliable and well-controllable PeLED crystallization process based on beam-damage-free near-infrared laser (lambda = 808 nm) irradiation. Morphology of the CH3NH3PbBr3 films can be precisely controlled by laser irradiation condition parameters: power density and beam scan rate. We systematically investigate the perovskite film morphology and device performance of the PeLEDs under different processing conditions. In the optimum power density and high beam scan rate (30 W cm(-2), 0.1 mm s(-1)), a dense and smooth perovskite film is attained with a small crystal grain size. The critical relationship between the crystal grain size and LED efficiency is established while attaining the device performance of 0.95 cd A(-1) efficiency and 1784 cd m(-2).