DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Gun-Hee | ko |
dc.contributor.author | Bae, Hagyoul | ko |
dc.contributor.author | Hur, Jae | ko |
dc.contributor.author | Kim, Choong-Ki | ko |
dc.contributor.author | Lee, Geon-Beom | ko |
dc.contributor.author | Bang, Tewook | ko |
dc.contributor.author | Son, Yoon-Ik | ko |
dc.contributor.author | Ryu, Seong-Wan | ko |
dc.contributor.author | Choi, Yang-Kyu | ko |
dc.date.accessioned | 2018-02-21T06:02:28Z | - |
dc.date.available | 2018-02-21T06:02:28Z | - |
dc.date.created | 2018-02-12 | - |
dc.date.created | 2018-02-12 | - |
dc.date.created | 2018-02-12 | - |
dc.date.issued | 2018-02 | - |
dc.identifier.citation | IEEE TRANSACTIONS ON ELECTRON DEVICES, v.65, no.2, pp.419 - 423 | - |
dc.identifier.issn | 0018-9383 | - |
dc.identifier.uri | http://hdl.handle.net/10203/240199 | - |
dc.description.abstract | A highly biased linear current method (HBLCM) for separately extracting source and drain resistance (R-S and R-D) in MOSFETs is proposed. The technique can be applied to a single device by using simple modeling. Compared to other methods, it provides accurate values of R-S and R-D because it considers carrier mobility degradation. The method basically uses linear current versus gate voltage (I-DS-V-GS and I-SD-V-GD) characteristics before and after the source/drain interchange (I-DS and I-SD). Afterward, by using the traditional Y-function and subsequent resistance modeling in a highly biased linear condition, R-S and R-D can be separately extracted. In order to evaluate and verify the accuracy of HBLCM, an external resistor was intentionally connected to a source electrode of a device, and the resulting change in source resistance was detected using the proposed method. Moreover, to demonstrate an application of the proposed method, internal resistance deliberately created by hot-carrier injection (HCI) was linked to a drain electrode, thereby changing drain resistance. The changed drain resistancewas also sensed by the HBLCM. Afterward, the HCI-stressed device was cured by electrothermal annealing driven by Joule heating, and the recovery was again clearly observed using the proposed method. | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject | FIELD-EFFECT TRANSISTORS | - |
dc.subject | SERIES RESISTANCE | - |
dc.subject | STRAINED SI | - |
dc.subject | MOBILITY | - |
dc.subject | PARAMETERS | - |
dc.subject | DEGRADATION | - |
dc.subject | GE | - |
dc.title | Highly Biased Linear Condition Method for Separately Extracting Source and Drain Resistance in MOSFETs | - |
dc.type | Article | - |
dc.identifier.wosid | 000423124500006 | - |
dc.identifier.scopusid | 2-s2.0-85040067961 | - |
dc.type.rims | ART | - |
dc.citation.volume | 65 | - |
dc.citation.issue | 2 | - |
dc.citation.beginningpage | 419 | - |
dc.citation.endingpage | 423 | - |
dc.citation.publicationname | IEEE TRANSACTIONS ON ELECTRON DEVICES | - |
dc.identifier.doi | 10.1109/TED.2017.2783924 | - |
dc.contributor.localauthor | Choi, Yang-Kyu | - |
dc.contributor.nonIdAuthor | Kim, Gun-Hee | - |
dc.contributor.nonIdAuthor | Lee, Geon-Beom | - |
dc.contributor.nonIdAuthor | Bang, Tewook | - |
dc.contributor.nonIdAuthor | Son, Yoon-Ik | - |
dc.contributor.nonIdAuthor | Ryu, Seong-Wan | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Drain resistance | - |
dc.subject.keywordAuthor | extrinsic resistance | - |
dc.subject.keywordAuthor | high-kmetal gate (HKMG) MOSFET | - |
dc.subject.keywordAuthor | intrinsic resistance | - |
dc.subject.keywordAuthor | parasitic resistance | - |
dc.subject.keywordAuthor | separate extraction | - |
dc.subject.keywordAuthor | series resistance | - |
dc.subject.keywordAuthor | source resistance | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | SERIES RESISTANCE | - |
dc.subject.keywordPlus | STRAINED SI | - |
dc.subject.keywordPlus | MOBILITY | - |
dc.subject.keywordPlus | PARAMETERS | - |
dc.subject.keywordPlus | DEGRADATION | - |
dc.subject.keywordPlus | GE | - |
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