A 280-/300-GHz Three-Stage Amplifiers in 65-nm CMOS With 12-/9-dB Gain and 1.6/1.4% PAE While Dissipating 17.9 mW

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This letter reports the design of terahertz amplifiers using the concept of maximum achievable gain (G(max)) of a transistor embedded in a linear, lossless, reciprocal network. Implemented in a 65-nm CMOS, by adopting the optimized G(max)-core, 280-and 300-GHz amplifiers achieve peak gain of 12 and 9 dB, peak power-added efficiency (PAE) of 1.6% and 1.4%, and gain per stage of 4 and 3 dB, respectively, while dissipating 17.9 mW, which is the best performance up to date in terms of operating frequency, gain per stage, and PAE in CMOS process.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2018-01
Language
English
Article Type
Article
Citation

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, v.28, no.1, pp.79 - 81

ISSN
1531-1309
DOI
10.1109/LMWC.2017.2777106
URI
http://hdl.handle.net/10203/240153
Appears in Collection
EE-Journal Papers(저널논문)
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