GROUNDED BODY SOI(GBSOI) NMOSFET BY WAFER BONDING

Abstract

We have fabricated a grounded body silicon-on-insulator (GBSOI) nMOSFET by wafer bonding and etch back technology. The GBSOI has all the inherent advantages of SOI such as speed and radiation hardness, while such problems as the low breakdown voltage and kink effect are completely solved due to the p(+) polysilicon grounded body. It also has high packing density because several SOI bodies and the ground line are connected via the pi polysilicon layer buried under the channel region.