High-Performance Flexible Multilayer MoS2 Transistors on Solution-Based Polyimide Substrates

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Transition metal dichalcogenides (TMDs) layers of molecular thickness, in particular molybdenum disulfide (MoS2), become increasingly important as active elements for mechanically flexible/stretchable electronics owing to their relatively high carrier mobility, wide bandgap, and mechanical flexibility. Although the superior electronic properties of TMD transistors are usually integrated into rigid silicon wafers or glass substrates, the achievement of similar device performance on flexible substrates remains quite a challenge. The present work successfully addresses this challenge by a novel process architecture consisting of a solution-based polyimide (PI) flexible substrate in which laser-welded silver nanowires are embedded, a hybrid organic/inorganic gate insulator, and multilayers of MoS2. Transistors fabricated according to this process scheme have decent properties: a field-effect-mobility as high as 141 cm(2) V-1 s(-1) and an I-on/I-off ratio as high as 5 x 10(5). Furthermore, no apparent degradation in the device properties is observed under systematic cyclic bending tests with bending radii of 10 and 5 mm. Overall electrical and mechanical results provide potentially important applications in the fabrication of versatile areas of flexible integrated circuitry.
Publisher
WILEY-V C H VERLAG GMBH
Issue Date
2016-04
Language
English
Article Type
Article
Keywords

THIN-FILM TRANSISTORS; CARBON NANOTUBE COATINGS; ELECTRONIC SKIN; TRANSPARENT ELECTRODES; MOLYBDENUM-DISULFIDE; NANOWIRE FILMS; CONDUCTIVITY; ULTRATHIN; PRESSURE; POLYMER

Citation

ADVANCED FUNCTIONAL MATERIALS, v.26, no.15, pp.2426 - 2434

ISSN
1616-301X
DOI
10.1002/adfm.201505019
URI
http://hdl.handle.net/10203/239960
Appears in Collection
ME-Journal Papers(저널논문)
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