Low-Temperature Deterministic Growth of Ge Nanowires Using Cu Solid Catalysts

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Cu-Catalytic Growth of Ge Nanowires: Low temperature, deterministic growth characteristics are available by the Cu-catalytic growth. The low-temperature growth is accessible at as low as 200 degrees C on polymer substrates, and the epitaxial growth is also possible on single-crystalline substrates with the narrow diameter distribution of 7 nm, directly templated from those of Cu catalysts.
Publisher
WILEY-V C H VERLAG GMBH
Issue Date
2008-12
Language
English
Article Type
Article
Keywords

SILICON NANOWIRES; SI NANOWIRES; MECHANISM; NANOCRYSTALS

Citation

ADVANCED MATERIALS, v.20, no.24, pp.4684 - +

ISSN
0935-9648
DOI
10.1002/adma.200801764
URI
http://hdl.handle.net/10203/238890
Appears in Collection
MS-Journal Papers(저널논문)
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