Unconventional roles of metal catalysts in chemical-vapor syntheses of single-crystalline nanowires

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In this invited contribution at the 29th International Conference on the Physics of semiconductors (ICPS 2008), we review two examples of solid-catalytic nanowire (NW) growth in parallel comparisons to the NW growth from the eutectic liquid catalyst. First, we demonstrated the Cu-catalyzed Ge NW growth using GeH(4) vapor precursor at 200 degrees C, which is far below the Cu-Ge eutectic temperature of 644 degrees C, with a relatively uniform diameter distribution directly templated from that of the catalysts. We provide evidence that the formation of solid Cu(3)Ge catalysts and Ge diffusion across the catalysts are responsible for such low-temperature growth of Ge NWs in a size-deterministic manner. Second, we show the spontaneous silicidation of NiSi(x) NWs on continuous Ni bulks using SiH(4) vapor precursor at 400 degrees C. This growth is particularly marked in that NiSi(x) NWs are formed in a self-organized manner without employing the nanocluster catalysts. We discuss this spontaneous growth of NiSi(x) NWs within the frame of the nucleation kinetics in the low supersaturation limit in analogous with the earlier examples of the vapor-condensation at the low vapor pressures. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3117233]
Publisher
AMER INST PHYSICS
Issue Date
2009-06
Language
English
Article Type
Article; Proceedings Paper
Keywords

SILICON NANOWIRES; GE NANOWIRES; GROWTH; TEMPERATURE; MECHANISM

Citation

JOURNAL OF APPLIED PHYSICS, v.105, no.12

ISSN
0021-8979
DOI
10.1063/1.3117233
URI
http://hdl.handle.net/10203/238889
Appears in Collection
MS-Journal Papers(저널논문)
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