DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Hyun-Seung | ko |
dc.contributor.author | Kim, Cheol-Joo | ko |
dc.contributor.author | Lee, Donghun | ko |
dc.contributor.author | Lee, Ru Ri | ko |
dc.contributor.author | Kang, Kibum | ko |
dc.contributor.author | Hwang, Inchan | ko |
dc.contributor.author | Jo, Moon-Ho | ko |
dc.date.accessioned | 2018-01-30T04:23:31Z | - |
dc.date.available | 2018-01-30T04:23:31Z | - |
dc.date.created | 2018-01-09 | - |
dc.date.created | 2018-01-09 | - |
dc.date.issued | 2012-11 | - |
dc.identifier.citation | NANO LETTERS, v.12, no.11, pp.5913 - 5918 | - |
dc.identifier.issn | 1530-6984 | - |
dc.identifier.uri | http://hdl.handle.net/10203/238878 | - |
dc.description.abstract | Large spectral modulation in the photon-to-electron conversion near the absorption band-edge of semiconductor by an applied electrical field can be a basis for efficient electro-optical modulators. This electro-absorption effect in Group IV semiconductors is, however, inherently weak, and this poses the technological challenges for their electro-photonic integration. Here we report unprecedentedly large electro-absorption susceptibility at the direct band-edge of intrinsic Ge nanowire (NW) photodetectors, which strongly diameter-dependent. We provide evidence that the large spectral shift at the 1.55 mu m wavelength, enhanced up to 20 times larger than Ge bulk crystals, is attributed to the internal Franz-Keldysh effect across the NW surface field of similar to 10(5) V/cm, mediated by the strong photoconductive gain. This classical size-effect operating at the nanometer scale is universal, regardless of the choice of materials, and thus suggests general implications for the monolithic integration of Group IV photonic circuits. | - |
dc.language | English | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.subject | FRANZ-KELDYSH | - |
dc.subject | ELECTRIC-FIELD | - |
dc.subject | OPTICAL MODULATORS | - |
dc.subject | ABSORPTION EDGE | - |
dc.subject | QUANTUM DOTS | - |
dc.subject | WAVE-GUIDE | - |
dc.subject | GERMANIUM | - |
dc.subject | SILICON | - |
dc.subject | PHOTODETECTORS | - |
dc.subject | DEPENDENCE | - |
dc.title | Large Electroabsorption Susceptibility Mediated by Internal Photoconductive Gain in Ge Nanowires | - |
dc.type | Article | - |
dc.identifier.wosid | 000311244400081 | - |
dc.identifier.scopusid | 2-s2.0-84869158047 | - |
dc.type.rims | ART | - |
dc.citation.volume | 12 | - |
dc.citation.issue | 11 | - |
dc.citation.beginningpage | 5913 | - |
dc.citation.endingpage | 5918 | - |
dc.citation.publicationname | NANO LETTERS | - |
dc.identifier.doi | 10.1021/nl3033203 | - |
dc.contributor.localauthor | Kang, Kibum | - |
dc.contributor.nonIdAuthor | Lee, Hyun-Seung | - |
dc.contributor.nonIdAuthor | Kim, Cheol-Joo | - |
dc.contributor.nonIdAuthor | Lee, Donghun | - |
dc.contributor.nonIdAuthor | Lee, Ru Ri | - |
dc.contributor.nonIdAuthor | Hwang, Inchan | - |
dc.contributor.nonIdAuthor | Jo, Moon-Ho | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Electro-optical modulation | - |
dc.subject.keywordAuthor | photoconductive gain | - |
dc.subject.keywordAuthor | photodetector | - |
dc.subject.keywordAuthor | Group IV photonics | - |
dc.subject.keywordAuthor | Ge nanowires | - |
dc.subject.keywordAuthor | Franz-Keldysh effect | - |
dc.subject.keywordPlus | FRANZ-KELDYSH | - |
dc.subject.keywordPlus | ELECTRIC-FIELD | - |
dc.subject.keywordPlus | OPTICAL MODULATORS | - |
dc.subject.keywordPlus | ABSORPTION EDGE | - |
dc.subject.keywordPlus | QUANTUM DOTS | - |
dc.subject.keywordPlus | WAVE-GUIDE | - |
dc.subject.keywordPlus | GERMANIUM | - |
dc.subject.keywordPlus | SILICON | - |
dc.subject.keywordPlus | PHOTODETECTORS | - |
dc.subject.keywordPlus | DEPENDENCE | - |
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