Large Electroabsorption Susceptibility Mediated by Internal Photoconductive Gain in Ge Nanowires

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Large spectral modulation in the photon-to-electron conversion near the absorption band-edge of semiconductor by an applied electrical field can be a basis for efficient electro-optical modulators. This electro-absorption effect in Group IV semiconductors is, however, inherently weak, and this poses the technological challenges for their electro-photonic integration. Here we report unprecedentedly large electro-absorption susceptibility at the direct band-edge of intrinsic Ge nanowire (NW) photodetectors, which strongly diameter-dependent. We provide evidence that the large spectral shift at the 1.55 mu m wavelength, enhanced up to 20 times larger than Ge bulk crystals, is attributed to the internal Franz-Keldysh effect across the NW surface field of similar to 10(5) V/cm, mediated by the strong photoconductive gain. This classical size-effect operating at the nanometer scale is universal, regardless of the choice of materials, and thus suggests general implications for the monolithic integration of Group IV photonic circuits.
Publisher
AMER CHEMICAL SOC
Issue Date
2012-11
Language
English
Article Type
Article
Keywords

FRANZ-KELDYSH; ELECTRIC-FIELD; OPTICAL MODULATORS; ABSORPTION EDGE; QUANTUM DOTS; WAVE-GUIDE; GERMANIUM; SILICON; PHOTODETECTORS; DEPENDENCE

Citation

NANO LETTERS, v.12, no.11, pp.5913 - 5918

ISSN
1530-6984
DOI
10.1021/nl3033203
URI
http://hdl.handle.net/10203/238878
Appears in Collection
MS-Journal Papers(저널논문)
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