Growth of straight one-dimensional Ge/ZnSe heterojunctions with atomically sharp interfaces by catalytic residue controls

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One-dimensional (1D) heteroepitaxy with an abrupt interface is essential to construct the 1D heterojunctions required for photonic and electronic devices. During catalytic 1D heteroepitaxial growth, however, the heterojunctions are generically kinked and composition-diffused across the interfaces. Here, we report a simple synthetic route for straight 1D heteroepitaxy with atomically sharp interfaces of group IV(Ge)/group II-VI(ZnSe) nanowires (NWs) during Au-catalytic growth. Specifically, it is discovered that eliminating residues in Au catalysts by Se vapour treatments lowers the energy barrier for the Ge NW axial heteroepitaxy on ZnSe NWs, and forms atomically abrupt heterointerfaces. We verified such 1D variation in the local electronic band structure of the grown Ge/ZnSe NW heterojunctions with spatially resolved photocurrent measurements.
Publisher
IOP PUBLISHING LTD
Issue Date
2014-01
Language
English
Article Type
Article
Keywords

NANOWIRE HETEROSTRUCTURES; SEMICONDUCTOR NANOWIRES; GE NANOWIRES; AXIAL HETEROJUNCTIONS; MODULATION; MORPHOLOGY; ABRUPTNESS; GAIN

Citation

NANOTECHNOLOGY, v.25, no.1

ISSN
0957-4484
DOI
10.1088/0957-4484/25/1/014010
URI
http://hdl.handle.net/10203/238869
Appears in Collection
MS-Journal Papers(저널논문)
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