Radiation tolerant dummy gate-assisted n-MOSFET, and method and apparatus for modeling channel of semiconductor device
- Assignee
- KAIST
- Country
- US (United States)
- Issue Date
- 2014-12-09
- Application Date
- 2013-12-10
- Application Number
- 14101505
- Registration Date
- 2014-12-09
- Registration Number
- 8907380
- Appears in Collection
- EE-Patent(특허)
- Files in This Item
- There are no files associated with this item.
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