Complementary metal oxide semiconductor image sensor and method for fabricating the same

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Provided are a CMOS image sensor and a method for fabricating the same. A nanopillar is plurally formed at an upper end of a light receiving element.
Assignee
KAIST
Country
US (United States)
Issue Date
2010-06-22
Application Date
2006-12-06
Application Number
11567513
Registration Date
2010-06-22
Registration Number
7741664
URI
http://hdl.handle.net/10203/232723
Appears in Collection
EE-Patent(특허)
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