탄소 나노 튜브를 이용한 상변화 메모리 및 이의 제조 방법 Method for fabricating phase change memory device

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Provided are a phase change memory device that can operate at low power and improve the scale of integration by reducing a contact area between a phase change material and a bottom electrode, and a method for fabricating the same. The phase change memory comprises a current source electrode, a phase change material layer, a plurality of carbon nanotube electrodes, and an insulation layer. The phase change material layer is disposed to face the current source electrode in side direction. The carbon nanotube electrodes are disposed between the current source electrode and the phase change material layer. The insulation layer is formed outside the carbon nanotube electrodes and functions to reduce the loss of heat generated at the carbon nanotube electrodes.
Assignee
KAIST
Country
CC (Cocos Islands)
Issue Date
2010-10-13
Application Date
2006-12-25
Application Number
2006-10168098
Registration Date
2010-10-13
Registration Number
001996634
URI
http://hdl.handle.net/10203/230994
Appears in Collection
EE-Patent(특허)
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