CMOS Image SensorCMOS 이미지 센서
Disclosed is a CMOS image sensor, comprising a photodiode formed in a substrate, a floating diffusion region formed in the substrate in a manner such that it is distanced from the photodiode surrounds the photodiode and a transfer gate formed in a manner such that it is distanced from the photodiode and the floating diffusion region and formed in a boundary area between the photodiode and the floating diffusion region, thereby overlapping the photodiode and the floating diffusion region.
- Assignee
- KAIST
- Country
- JA (Japan)
- Issue Date
- 2009-09-18
- Application Date
- 2006-06-16
- Application Number
- 2006-166845
- Registration Date
- 2009-09-18
- Registration Number
- 4378363
- Appears in Collection
- EE-Patent(특허)
- Files in This Item
- There are no files associated with this item.
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