A High-Performance, Flexible Top-Gated Graphene Field-Effect Transistor with an iCVD Copolymer Gate Dielectric

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dc.contributor.author박관용ko
dc.contributor.author오중건ko
dc.contributor.author김충선ko
dc.contributor.author조병진ko
dc.contributor.author임성갑ko
dc.date.accessioned2017-12-19T01:02:28Z-
dc.date.available2017-12-19T01:02:28Z-
dc.date.created2017-12-04-
dc.date.issued2017-10-27-
dc.identifier.citation2017년 추계 한국화학공학회-
dc.identifier.urihttp://hdl.handle.net/10203/228485-
dc.languageEnglish-
dc.publisher한국화학공학회-
dc.titleA High-Performance, Flexible Top-Gated Graphene Field-Effect Transistor with an iCVD Copolymer Gate Dielectric-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.publicationname2017년 추계 한국화학공학회-
dc.identifier.conferencecountryKO-
dc.identifier.conferencelocation대전컨벤션센터-
dc.contributor.localauthor조병진-
dc.contributor.localauthor임성갑-
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EE-Conference Papers(학술회의논문)CBE-Conference Papers(학술회의논문)
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