Investigation of Border Trap Characteristics in the AlON/GeO2/Ge Gate Stacks

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Aluminumoxynitride (AlON) is investigated as a germanium oxide (GeO) desorption barrier layer for Ge MOSFETs. Interface and border traps in the AlON/GeO2/Ge gate-stack are discussed in detail and compared with those in the Al2O3/GeO2/Ge gate-stack via MOS and MOSFET structures. Although the interface traps remain the same for AlON and Al2O3 in the gate stacks, the AlON gate-stack exhibits a reduced border trap, which results in improved reliability over the Al2O3 gate-stack. This is supported by both the charge-trappingand low-frequency noise analyses.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2017-10
Language
English
Article Type
Article
Citation

IEEE TRANSACTIONS ON ELECTRON DEVICES, v.64, no.10, pp.3998 - 4001

ISSN
0018-9383
DOI
10.1109/TED.2017.2741496
URI
http://hdl.handle.net/10203/227515
Appears in Collection
EE-Journal Papers(저널논문)
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