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College of Engineering(공과대학)School of Electrical Engineering(전기및전자공학부)EE-Journal Papers(저널논문)

Fermi Level Depinning in Ti/GeO2/n-Ge via the Interfacial Reaction Between Ti and GeO2

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dc.contributor.authorSeo, Yujinko
dc.contributor.authorLee, Tae Inko
dc.contributor.authorAhn, Hyunjunko
dc.contributor.authorMoon, Jungminko
dc.contributor.authorHwang, Wan Sikko
dc.contributor.authorYu, Hyun-Yongko
dc.contributor.authorCho, Byung Jinko
dc.date.accessioned2017-12-05T02:09:07Z-
dc.date.available2017-12-05T02:09:07Z-
dc.date.created2017-11-28-
dc.date.created2017-11-28-
dc.date.created2017-11-28-
dc.date.created2017-11-28-
dc.date.issued2017-10-
dc.identifier.citationIEEE TRANSACTIONS ON ELECTRON DEVICES, v.64, no.10, pp.4242 - 4245-
dc.identifier.issn0018-9383-
dc.identifier.urihttp://hdl.handle.net/10203/227513-
dc.description.abstractA new method of forming an ohmic contact without an increase in parasitic resistance is proposed in the Ti/GeO2/Ge substrate. Fermi-level depinning in Ti/GeO2/n-Ge contacts is possible with the formation of an interfacial TiOx layer in the contacts via an interfacial reaction. Unlike the intentional deposition of a metal oxide on a Ge substrate, this method provides easy process integration to lessen Fermi-level pinning in n-type Ge substrates.-
dc.languageEnglish-
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC-
dc.titleFermi Level Depinning in Ti/GeO2/n-Ge via the Interfacial Reaction Between Ti and GeO2-
dc.typeArticle-
dc.identifier.wosid000413728700039-
dc.identifier.scopusid2-s2.0-85028457224-
dc.type.rimsART-
dc.citation.volume64-
dc.citation.issue10-
dc.citation.beginningpage4242-
dc.citation.endingpage4245-
dc.citation.publicationnameIEEE TRANSACTIONS ON ELECTRON DEVICES-
dc.identifier.doi10.1109/TED.2017.2736163-
dc.contributor.localauthorCho, Byung Jin-
dc.contributor.nonIdAuthorHwang, Wan Sik-
dc.contributor.nonIdAuthorYu, Hyun-Yong-
dc.description.isOpenAccessN-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorFermi-level pinning (FLP)-
dc.subject.keywordAuthorgermanium-
dc.subject.keywordAuthorSchottky barrier height (SBH)-
dc.subject.keywordAuthortitanium oxide-
dc.subject.keywordPlusOVERLAYER THICKNESS-
dc.subject.keywordPlusCONTACT RESISTIVITY-
dc.subject.keywordPlusDIFFUSION-
dc.subject.keywordPlusOXYGEN-
dc.subject.keywordPlusREDUCTION-
dc.subject.keywordPlusTITANIUM-
dc.subject.keywordPlusLAYER-
dc.subject.keywordPlusXPS-
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