CMOS LNA with Darlington-pair for UWB systems

A 3-5 GHz ultra-wideband CMOS low-noise amplifier fabricated using 0.18 mu m CMOS process is presented. To achieve wideband characteristics, a two-frequency matching method for input matching is proposed. A cutoff-frequency (f(T)) doubler using Darlington-pair is employed to achieve high gain from 2.4 to 5.4 GHz. The LNA achieves an average gain of 21 dB, input return loss less than -10 dB, and a noise figure of 2.85-4.5 dB at a power consumption of 23 mW The input 1 dB gain compression point (P1 dB) and IIP3 are -22 and -14 dBm at 4 GHz, respectively.
Publisher
INST ENGINEERING TECHNOLOGY-IET
Issue Date
2006-08
Language
ENG
Citation

ELECTRONICS LETTERS, v.42, no.16, pp.913 - 915

ISSN
0013-5194
DOI
10.1049/el:20061209
URI
http://hdl.handle.net/10203/2272
Appears in Collection
EE-Journal Papers(저널논문)
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