Reduction of dark current in an n-type In0.3Ga0.7As/GaAs quantum well infrared photodetector by using a camel diode structure

Long wavelength infrared absorption characteristics of an ln(0.3)Ga(0.7)As/GaAs quantum well infrared photodetector (QWIP) employing an n-i-p-i-n camel diode structure were compared with those of a conventional n-QWIP. QWIPs showed a photocurrent response peak at the wavelength of approximately 10 mum due to electronic intersubband transitions in quantum wells. The QWIP employing the camel diode structure showed a reduced dark current. an increased responsivityrid thus all improved detectivity compared with those of the conventional n-QWlP due to the presence of the n-i-p-i-n camel barrier. The results indicated the potential of the QWIP employing an n-i-p-i-n camel diode structure for use in infrared detectors operating at elevated operating temperature. (C) 2002 Elsevier Science Ltd. All rights reserved.
Publisher
PERGAMON-ELSEVIER SCIENCE LTD
Issue Date
2002-05
Language
ENG
Keywords

ABSORPTION; NOISE; GAIN

Citation

SOLID-STATE ELECTRONICS, v.46, no.5, pp.651 - 654

ISSN
0038-1101
DOI
10.1016/S0038-1101(01)00334-3
URI
http://hdl.handle.net/10203/2271
Appears in Collection
EE-Journal Papers(저널논문)
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