Multi-Layer Metallization Structure Development for Highly Efficient Polycrystalline SnSe Thermoelectric Devices

Abstract

Recently, SnSe material with an outstanding high ZT (Figure of merit) of 2.6 has attracted much attention due to its strong applicability for highly efficient thermoelectric devices. Many studies following the first journal publication have been focused on SnSe materials, not on thermoelectric devices. Particularly, to realize highly efficient intermediate-temperature (600~1000 K) thermoelectric modules with this promising thermoelectric material, a more thermally and electrically reliable interface bonding technology needs to be developed so that the modules can stably perform their power generation in this temperature range. In this work, we demonstrate several approaches to develop metallization layers on SnSe thermoelectric legs. The single-layer metallization shows limitations in their electrical contact resistances and elemental diffusions. The Ag/Co/Ti multi-layer metallization results in lowering their electrical contact resistances, in addition to providing more robust interfaces. Moreover, it is found to maintain the interfacial characteristics without any significant degradation, even after heat treatment at 723 K for 20 h. These results can be effectively applied in the fabrication of thermoelectric devices or modules that are made of the SnSe thermoelectric materials.