Organic flash memory on various flexible substrates for foldable and disposable electronics

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With the emergence of wearable or disposable electronics, there grows a demand for a flash memory realizable on various flexible substrates. Nevertheless, it has been challenging to develop a flash memory that simultaneously exhibits a significant level of flexibility and performance. This is mainly due to the scarcity of flexible dielectric materials with insulating properties sufficient for a flash memory, which involves dual dielectric layers, respectively, responsible for tunneling and blocking of charges. Here we report ultra-flexible organic flash memories based on polymer dielectrics prepared by initiated chemical vapor deposition. Using their near-ideal dielectric characteristics, we demonstrate flash memories bendable down to a radius of 300 mu m that exhibits a relatively long-projected retention with a programming voltage on par with the present industrial standards. The proposed memory technology is then applied to non-conventional substrates, such as papers, to demonstrate its feasibility in a wide range of applications.
Publisher
NATURE PUBLISHING GROUP
Issue Date
2017-09
Language
English
Article Type
Article
Keywords

FIELD-EFFECT TRANSISTORS; CHEMICAL-VAPOR-DEPOSITION; DOUBLE-FLOATING-GATE; OXIDE THIN-FILMS; HIGH-MOBILITY; NONVOLATILE MEMORIES; VOLTAGE; DEVICES; PAPER; GRAPHENE

Citation

NATURE COMMUNICATIONS, v.8, pp.725

ISSN
2041-1723
DOI
10.1038/s41467-017-00805-z
URI
http://hdl.handle.net/10203/226622
Appears in Collection
CBE-Journal Papers(저널논문)EE-Journal Papers(저널논문)
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