Single-walled carbon nanotubes oust graphene and semiconductor saturable absorbers in Q-switched solid-state lasers at 2 mu m

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The superior performance of a saturable absorber (SA) based on randomly-oriented single-walled carbon nanotubes (SWCNTs) operating in the spectral region of their first fundamental transition E-11 over a graphene-SA containing several (n = 3) carbon layers and a commercial semiconductor SA (SESA) for passive Q-switching of bulk thulium solid-state lasers is demonstrated. Using SWCNT-SA in a compact diode-pumped Tm:KLuW laser, a maximum average output power of 1.36 W is achieved at 1932-1944 nm corresponding to a slope efficiency of 41% and pulse characteristics of 48 ns/5.5 mu J which are superior to that for graphene-SA (123 ns/3.1 mu J) and SESA (61 ns/1.1 mu J). SWCNT-SAs are promising for eye-safe miniature lasers at similar to 2 mu m generating nanosecond pulses in the MHz repetition frequency range.
Publisher
IOP PUBLISHING LTD
Issue Date
2017-09
Language
English
Article Type
Article
Keywords

PICOSECOND MICROCHIP LASERS; MODE-LOCKING; DIODE; CERAMICS; WAVE; ENERGY; POWER; YB

Citation

LASER PHYSICS LETTERS, v.14, no.9, pp.095801

ISSN
1612-2011
DOI
10.1088/1612-202X/aa7f17
URI
http://hdl.handle.net/10203/226131
Appears in Collection
PH-Journal Papers(저널논문)
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