Tunnelling field effect transistor based on MoTe2/MoS2 van der Waals heterojunction

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dc.contributor.authorKoo, Bondaeko
dc.contributor.authorShin, Gwang Hyukko
dc.contributor.authorPark, Haminko
dc.contributor.authorChoi, Sung-Yoolko
dc.date.accessioned2017-09-25T02:44:33Z-
dc.date.available2017-09-25T02:44:33Z-
dc.date.created2017-09-11-
dc.date.created2017-09-11-
dc.date.created2017-09-11-
dc.date.issued2017-03-27-
dc.identifier.citationGraphene 2017-
dc.identifier.urihttp://hdl.handle.net/10203/225914-
dc.languageEnglish-
dc.publisherGraphene 2017-
dc.titleTunnelling field effect transistor based on MoTe2/MoS2 van der Waals heterojunction-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.publicationnameGraphene 2017-
dc.identifier.conferencecountrySP-
dc.identifier.conferencelocationCentre de Convencions Internacional de Barcelona-
dc.contributor.localauthorChoi, Sung-Yool-
dc.contributor.nonIdAuthorKoo, Bondae-
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EE-Conference Papers(학술회의논문)
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