Tunneling field-effect transistor based on MoS2-Si vertical hetero-structure

Cited 0 time in webofscience Cited 0 time in scopus
  • Hit : 265
  • Download : 0
DC FieldValueLanguage
dc.contributor.authorShin, Gwang Hyukko
dc.contributor.authorKoo, Bondaeko
dc.contributor.authorPark, Haminko
dc.contributor.authorWoo, Youngjunko
dc.contributor.authorChoi, Sung-Yoolko
dc.date.accessioned2017-09-25T02:43:15Z-
dc.date.available2017-09-25T02:43:15Z-
dc.date.created2017-09-11-
dc.date.created2017-09-11-
dc.date.created2017-09-11-
dc.date.issued2017-07-13-
dc.identifier.citationNANO KOREA 2017-
dc.identifier.urihttp://hdl.handle.net/10203/225897-
dc.languageEnglish-
dc.publisherNANO KOREA 2017-
dc.titleTunneling field-effect transistor based on MoS2-Si vertical hetero-structure-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.publicationnameNANO KOREA 2017-
dc.identifier.conferencecountryKO-
dc.identifier.conferencelocationKINTEX, Ilsan(Seoul)-
dc.contributor.localauthorChoi, Sung-Yool-
dc.contributor.nonIdAuthorKoo, Bondae-
dc.contributor.nonIdAuthorWoo, Youngjun-
Appears in Collection
EE-Conference Papers(학술회의논문)
Files in This Item
There are no files associated with this item.

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0