DC Field | Value | Language |
---|---|---|
dc.contributor.author | Bae, Hagyoul | ko |
dc.contributor.author | Kim, Choong-Ki | ko |
dc.contributor.author | Choi, Yang-Kyu | ko |
dc.date.accessioned | 2017-09-08T05:22:58Z | - |
dc.date.available | 2017-09-08T05:22:58Z | - |
dc.date.created | 2017-08-28 | - |
dc.date.created | 2017-08-28 | - |
dc.date.issued | 2017-07 | - |
dc.identifier.citation | AIP ADVANCES, v.7, no.7 | - |
dc.identifier.issn | 2158-3226 | - |
dc.identifier.uri | http://hdl.handle.net/10203/225674 | - |
dc.description.abstract | A multi-frequency capacitance-conductance technique is proposed for characterizing the intrinsic density-of-states (DOS: gint(E)) inside an energy bandgap range (E-V < E < E-C) by de-embedding the structure-dependent parameters such as parasitic capacitance and resistance in a fabricated exfoliated molybdenum disulfide (MoS2) field effect transistor (EM-FET). The proposed technique uses the measured frequency-dispersive capacitance (Cm) and conductance (G(m)= 1/R-m= omega CmDm) data with the measured dissipation factor D-m(= G(m)/omega C-m) at a frequency range of 0.3 kHz to 10 kHz. To extract g(int)(E), an equivalent circuit model of the MoS2 FET converted from a two-element model for the parallel-mode (C-m-D-m) measurement was developed with this technique. (C) 2017 Author(s). | - |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | FIELD-EFFECT TRANSISTORS | - |
dc.subject | HETEROSTRUCTURES | - |
dc.title | Characterization of intrinsic subgap density-of-states in exfoliated MoS2 FETs using a multi-frequency capacitance-conductance technique | - |
dc.type | Article | - |
dc.identifier.wosid | 000406760200058 | - |
dc.identifier.scopusid | 2-s2.0-85023768009 | - |
dc.type.rims | ART | - |
dc.citation.volume | 7 | - |
dc.citation.issue | 7 | - |
dc.citation.publicationname | AIP ADVANCES | - |
dc.identifier.doi | 10.1063/1.4985752 | - |
dc.contributor.localauthor | Choi, Yang-Kyu | - |
dc.description.isOpenAccess | Y | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | HETEROSTRUCTURES | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.