Transparent and Flexible Resistive Random Access Memory Based on Al2O3 Film With Multilayer Electrodes

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We report a transparent and flexible resistive random access memory (ReRAM) using a multi-thin-layer electrode. The transparent and flexible ReRAM includes a multi-thin-layerelectrodethat is transparentand flexible and an Al2O3 layer as a transparent oxide material. When the multi-thin-layer electrode is used for the top and bottom electrode for the ReRAM, the ReRAM has transparent and flexible properties. The stable memory operation uses a Ti layer and an MgO layer between the Al2O3 layer andmultithin- layer electrodes. The transmittance of the ReRAM is over 70% at a visible wavelength on a PET substrate. We believe this transparent and flexible ReRAM will be useful for transparent and flexible electronic devices in the future.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2017-08
Language
English
Article Type
Article
Keywords

RRAM DEVICES

Citation

IEEE TRANSACTIONS ON ELECTRON DEVICES, v.64, no.8, pp.3508 - 3510

ISSN
0018-9383
DOI
10.1109/TED.2017.2716831
URI
http://hdl.handle.net/10203/225600
Appears in Collection
EE-Journal Papers(저널논문)
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