Electro-Thermal Annealing Method for Recovery of Cyclic Bending Stress in Flexible a-IGZO TFTs

Amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs) fabricated by low-temperature processes on a flexible substrate can easily be degraded by mechanical deformation. Furthermore, lower performance in terms of the initial characteristics and reliability levels compared to those fabricated on glass substrates with relatively high heat treatments is inevitable. To solve these problems, a local electro-thermal annealing (ETA) method was applied to flexible a-IGZO TFTs processed at low temperature to enhance the inferior initial characteristics and reliability under a bending state. The enhancement of the characteristics and reliability by ETA can be attributed to the reduction of defects related to the oxygen through a localized Joule heat treatment with an extremely short duration (similar to 1 ms). In addition, the effectiveness of ETA to recovery from bending stress even under harsh cyclic bending operation (strain condition of 0.833%) is verified.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2017-08
Language
English
Keywords

THIN-FILM TRANSISTORS; AMORPHOUS OXIDE SEMICONDUCTORS; ELECTRONIC-STRUCTURE

Citation

IEEE TRANSACTIONS ON ELECTRON DEVICES, v.64, no.8, pp.3189 - 3192

ISSN
0018-9383
DOI
10.1109/TED.2017.2717444
URI
http://hdl.handle.net/10203/225588
Appears in Collection
EE-Journal Papers(저널논문)MS-Journal Papers(저널논문)
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