TSV 기반 3차원 소자의 열적-기계적 신뢰성 Thermo-Mechanical Reliability of TSV based 3D-IC

The three-dimensional integrated circuit (3D-IC) is a general trend for the miniaturized and high-performance electronic devices. The through-silicon-via (TSV) is the advanced interconnection method to achieve 3D integration, which uses vertical metal via through silicon substrate. However, the TSV based 3D-IC undergoes severe thermo-mechanical stress due to the CTE (coefficient of thermal expansion) mismatch between via and silicon. The thermo-mechanical stress induces mechanical failure on silicon and silicon-via interface, which reduces the device reliability. In this paper, the thermo-mechanical reliability of TSV based 3D-IC is reviewed in terms of mechanical fracture, heat conduction, and material characteristic. Furthermore, the state of the art via-level and package-level design techniques are introduced to improve the reliability of TSV based 3D-IC.
Publisher
한국마이크로전자및패키징학회
Issue Date
2017-03
Language
Korean
Keywords

Through-Silicon-Via; Coefficient of Thermal Expansion; Thermal conductivity; Fracture; Reliability

Citation

마이크로전자 및 패키징학회지, v.24, no.1, pp.35 - 43

ISSN
1226-9360
URI
http://hdl.handle.net/10203/225498
Appears in Collection
ME-Journal Papers(저널논문)
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