Temperature-dependent characteristics of InP-RTD-based microwave amplifier IC

Cited 0 time in webofscience Cited 0 time in scopus
  • Hit : 167
  • Download : 0
A reflection-type microwave amplifier using InP-based resonant tunnelling diodes (RTDs) has been designed and fabricated. The implemented amplifier shows a low dc-power consumption of 270 mu W with RF gains of more than 11 dB at 5.61 GHz. Temperature-dependent characteristics of the RTD amplifier have been investigated at a high temperature. With increasing temperature from 25 to 100 degrees C, the centre frequency shift was measured to be 60 MHz. The RF gains (S-21/S-12) and the return losses (S-11/S-22) of the amplifier decreased from 11.45/11.32 and -7.96/-8.11 dB at 25 degrees C to 7.06/6.91 and -11.36/-11.15 dB at 100 degrees C, respectively. The S-parameter degradation phenomena are shown to mainly arise from the temperature dependence of the negative differential resistance (R-D) characteristic for the fabricated RTD.
Publisher
INST ENGINEERING TECHNOLOGY-IET
Issue Date
2017-07
Language
English
Article Type
Article
Keywords

FILTERS

Citation

ELECTRONICS LETTERS, v.53, no.15, pp.1058 - 1059

ISSN
0013-5194
DOI
10.1049/el.2017.1157
URI
http://hdl.handle.net/10203/225329
Appears in Collection
EE-Journal Papers(저널논문)
Files in This Item
There are no files associated with this item.

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0