Zero-static-power nonvolatile logic-in-memory circuits for flexible electronics

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Flexible logic circuits and memory with ultra-low static power consumption are in great demand for battery-powered flexible electronic systems. Here, we show that a flexible nonvolatile logic-in-memory circuit enabling normally-off computing can be implemented using a poly(1,3,5-trivinyl-1,3,5-trimethyl cyclotrisiloxane) (pV3D3)-based memristor array. Although memristive logic-in-memory circuits have been previously reported, the requirements of additional components and the large variation of memristors have limited demonstrations to simple gates within a few operation cycles on rigid substrates only. Using memristor-aided logic (MAGIC) architecture requiring only memristors and pV3D3-memristor with good uniformity on a flexible substrate, for the first time, we experimentally demonstrated our implementation of MAGIC-NOT and -NOR gates during multiple cycles and even under bent conditions. Other functions, such as OR, AND, NAND, and a half adder, are also realized by combinations of NOT and NOR gates within a crossbar array. This research advances the development of novel computing architecture with zero static power consumption for battery-powered flexible electronic systems.
Publisher
TSINGHUA UNIV PRESS
Issue Date
2017-07
Language
English
Article Type
Article
Keywords

CHEMICAL-VAPOR-DEPOSITION; MEMRISTIVE SWITCHES; DEVICES; SUBSTRATE; TRANSPARENT; COMPUTATION; TRANSISTORS; SYSTEMS; DESIGN; FILMS

Citation

NANO RESEARCH, v.10, no.7, pp.2459 - 2470

ISSN
1998-0124
DOI
10.1007/s12274-017-1449-y
URI
http://hdl.handle.net/10203/225094
Appears in Collection
CBE-Journal Papers(저널논문)EE-Journal Papers(저널논문)
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