Feasibility Study of Extended-Gate-Type Silicon Nanowire Field-Effect Transistors for Neural Recording

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In this research, a high performance silicon nanowire field-effect transistor ( transconductance as high as 34 mu S and sensitivity as 84 nS/mV) is extensively studied and directly compared with planar passive microelectrode arrays for neural recording application. Electrical and electrochemical characteristics are carefully characterized in a very well-controlled manner. We especially focused on the signal amplification capability and intrinsic noise of the transistors. A neural recording system using both silicon nanowire field-effect transistor-based active-type microelectrode array and platinum black microelectrode-based passive-type microelectrode array are implemented and compared. An artificial neural spike signal is supplied as input to both arrays through a buffer solution and recorded simultaneously. Recorded signal intensity by the silicon nanowire transistor was precisely determined by an electrical characteristic of the transistor, transconductance. Signal-to-noise ratio was found to be strongly dependent upon the intrinsic 1/f noise of the silicon nanowire transistor. We found how signal strength is determined and how intrinsic noise of the transistor determines signal-to-noise ratio of the recorded neural signals. This study provides in-depth understanding of the overall neural recording mechanism using silicon nanowire transistors and solid design guideline for further improvement and development.
Publisher
MDPI AG
Issue Date
2017-04
Language
English
Article Type
Article
Keywords

ACTION-POTENTIALS; 1/F NOISE; NEURONS; ARRAYS; MICROELECTRODES; CHANNEL

Citation

SENSORS, v.17, no.4

ISSN
1424-8220
DOI
10.3390/s17040705
URI
http://hdl.handle.net/10203/224106
Appears in Collection
EE-Journal Papers(저널논문)BiS-Journal Papers(저널논문)
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