DC Field | Value | Language |
---|---|---|
dc.contributor.author | Seo, Junbeom | ko |
dc.contributor.author | Lee, Jaehyun | ko |
dc.contributor.author | Shin, Mincheol | ko |
dc.date.accessioned | 2017-05-15T05:18:25Z | - |
dc.date.available | 2017-05-15T05:18:25Z | - |
dc.date.created | 2017-05-08 | - |
dc.date.created | 2017-05-08 | - |
dc.date.issued | 2017-04 | - |
dc.identifier.citation | IEEE TRANSACTIONS ON ELECTRON DEVICES, v.64, no.4, pp.1793 - 1798 | - |
dc.identifier.issn | 0018-9383 | - |
dc.identifier.uri | http://hdl.handle.net/10203/223668 | - |
dc.description.abstract | We investigate the performance of hysteresis-free short-channel negative-capacitance FETs (NCFETs) by combining quantum-mechanical calculations with the Landau-Khalatnikov equation. When the subthreshold swing (SS) becomes smaller than 60 mV/dec, a negative value of drain-induced barrier lowering is obtained. This behavior, drain-induced barrier rising (DIBR), causes negative differential resistance in the output characteristics of the NCFETs. We also examine the performance of an inverter composed of hysteresis-free NCFETs to assess the effects of DIBR at the circuit level. Contrary to our expectation, although hysteresis-free NCFETs are used, hysteresis behavior is observed in the transfer properties of the inverter. Furthermore, it is expected that the NCFET inverter with hysteresis behavior can be used as a Schmitt trigger inverter. | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject | FIELD-EFFECT TRANSISTORS | - |
dc.subject | DIFFERENTIAL RESISTANCE | - |
dc.subject | SIMULATION | - |
dc.subject | CIRCUIT | - |
dc.subject | DEVICES | - |
dc.subject | FILMS | - |
dc.title | Analysis of Drain-Induced Barrier Rising in Short-Channel Negative-Capacitance FETs and Its Applications | - |
dc.type | Article | - |
dc.identifier.wosid | 000398818400058 | - |
dc.identifier.scopusid | 2-s2.0-85012993447 | - |
dc.type.rims | ART | - |
dc.citation.volume | 64 | - |
dc.citation.issue | 4 | - |
dc.citation.beginningpage | 1793 | - |
dc.citation.endingpage | 1798 | - |
dc.citation.publicationname | IEEE TRANSACTIONS ON ELECTRON DEVICES | - |
dc.identifier.doi | 10.1109/TED.2017.2658673 | - |
dc.contributor.localauthor | Shin, Mincheol | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Drain-induced barrier lowering (DIBL) | - |
dc.subject.keywordAuthor | ferroelectric | - |
dc.subject.keywordAuthor | hysteresis behavior | - |
dc.subject.keywordAuthor | negative-capacitance FET | - |
dc.subject.keywordAuthor | Schmitt trigger inverter | - |
dc.subject.keywordAuthor | subthreshold swing (SS) | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | DIFFERENTIAL RESISTANCE | - |
dc.subject.keywordPlus | SIMULATION | - |
dc.subject.keywordPlus | CIRCUIT | - |
dc.subject.keywordPlus | DEVICES | - |
dc.subject.keywordPlus | FILMS | - |
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