Organic vapor-jet-based route for solvent-free additive formation of oxide semiconductors

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We demonstrate a novel solution-free technique which can be used to print metal oxide patterns without masks by adopting an organic vapor jet printing (VJP) method. To avoid the high deposition temperatures required for metal oxide vaporization, metal-organic compounds are first jet-printed as metal-oxide precursors and converted into metal oxides by a photo-conversion process. As an example, we show that indium oxides can easily be prepared from jet-printed films of indium acetylacetonate upon photo conversion; the effectiveness of which is supported by X-ray photoelectron spectroscopy (XPS) showing a reduction of the carbon portion associated with the alkyl chains of the precursors. A carrier mobility of 4.5 cm(2)/V.s and an on/off ratio of 10(5) are demonstrated in the oxide thin-film transistors based on indium oxides prepared by the proposed method, illustrating the potential usefulness of this process in electronic device fabrication. (C) 2017 Elsevier B.V. All rights reserved.
Publisher
ELSEVIER SCIENCE BV
Issue Date
2017-04
Language
English
Article Type
Article
Keywords

THIN-FILM TRANSISTORS; PHOTOCHEMICAL ACTIVATION; ELECTRONICS; FABRICATION; DEVICES

Citation

ORGANIC ELECTRONICS, v.43, pp.235 - 239

ISSN
1566-1199
DOI
10.1016/j.orgel.2017.01.033
URI
http://hdl.handle.net/10203/223228
Appears in Collection
EE-Journal Papers(저널논문)
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