DC Field | Value | Language |
---|---|---|
dc.contributor.author | Sharma, Ramakant | ko |
dc.contributor.author | Lee, Hyunwoo | ko |
dc.contributor.author | Borse, Kunal | ko |
dc.contributor.author | Gupta, Vinay | ko |
dc.contributor.author | Joshi, Amish G. | ko |
dc.contributor.author | Yoo, Seunghyup | ko |
dc.contributor.author | Gupta, Dipti | ko |
dc.date.accessioned | 2017-04-17T07:26:02Z | - |
dc.date.available | 2017-04-17T07:26:02Z | - |
dc.date.created | 2017-04-04 | - |
dc.date.created | 2017-04-04 | - |
dc.date.issued | 2017-04 | - |
dc.identifier.citation | ORGANIC ELECTRONICS, v.43, pp.207 - 213 | - |
dc.identifier.issn | 1566-1199 | - |
dc.identifier.uri | http://hdl.handle.net/10203/223227 | - |
dc.description.abstract | Ga-doped ZnO(GZO) is investigated as an electron transport layer in organic solar cells based on a promising donor: acceptor system of polyl(5,6-difluoro-2,1,3-benzothiadiazo1-4,7-diy1)-alt-(3,3"'-di(2-octyldode-cyl)-2,2'; 5',2";-5",2"'-quaterthio-phen-5,5"'-diyI)I (PffBT4T-20D):phenyl-C71-butyric acid methyl ester (PC70BM). With the inverted geometry having a configuration of ITO/GZO (40 nm)/13ffBT4T20D:PC70BM (270 nm)/MoO3 (20 nm)/AI (100 nm), maximum power conversion efficiency (PCE) of 9.74% has been achieved, while it is limited at 8.72% for devices with undoped ZnO. Our study based on the structural, morphological, compositional, and electrical characterizations indicate that suggests enhanced device performance of the GZO-based devices resulted mainly from the improved electrical properties of Ga-ZnO thin films as compared to undoped ZnO. (C) 2017 Elsevier B.V. All rights reserved. | - |
dc.language | English | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.subject | POLYMER PHOTOVOLTAIC CELLS | - |
dc.subject | ENERGY-CONVERSION EFFICIENCY | - |
dc.subject | HIGH-PERFORMANCE | - |
dc.subject | THIN-FILMS | - |
dc.subject | EXCEEDING 10-PERCENT | - |
dc.subject | BUFFER LAYER | - |
dc.subject | DESIGN RULES | - |
dc.subject | NANOPARTICLES | - |
dc.subject | PCBM | - |
dc.subject | CATHODE | - |
dc.title | Ga-doped ZnO as an electron transport layer for PffBT4T-20D: PC70BM organic solar cells | - |
dc.type | Article | - |
dc.identifier.wosid | 000395608300030 | - |
dc.identifier.scopusid | 2-s2.0-85010792470 | - |
dc.type.rims | ART | - |
dc.citation.volume | 43 | - |
dc.citation.beginningpage | 207 | - |
dc.citation.endingpage | 213 | - |
dc.citation.publicationname | ORGANIC ELECTRONICS | - |
dc.identifier.doi | 10.1016/j.orgel.2017.01.028 | - |
dc.contributor.localauthor | Yoo, Seunghyup | - |
dc.contributor.nonIdAuthor | Sharma, Ramakant | - |
dc.contributor.nonIdAuthor | Borse, Kunal | - |
dc.contributor.nonIdAuthor | Gupta, Vinay | - |
dc.contributor.nonIdAuthor | Joshi, Amish G. | - |
dc.contributor.nonIdAuthor | Gupta, Dipti | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Organic solar cells | - |
dc.subject.keywordAuthor | PffBT4T-20D:PC70BM | - |
dc.subject.keywordAuthor | Ga-doped ZnO | - |
dc.subject.keywordAuthor | Electron transport layers | - |
dc.subject.keywordAuthor | Hole blocking layer | - |
dc.subject.keywordPlus | POLYMER PHOTOVOLTAIC CELLS | - |
dc.subject.keywordPlus | ENERGY-CONVERSION EFFICIENCY | - |
dc.subject.keywordPlus | HIGH-PERFORMANCE | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.subject.keywordPlus | EXCEEDING 10-PERCENT | - |
dc.subject.keywordPlus | BUFFER LAYER | - |
dc.subject.keywordPlus | DESIGN RULES | - |
dc.subject.keywordPlus | NANOPARTICLES | - |
dc.subject.keywordPlus | PCBM | - |
dc.subject.keywordPlus | CATHODE | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.