Vertically Formed Graphene Stripe for 3D Field-Effect Transistor Applications

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A 100-nm wide, vertically formed graphene stripe (GS) is demonstrated for three-dimensional (3D) electronic applications. The GS forms along the sidewall of a thin nickel film. It is possible to further scale down the GS width by engineering the deposited thickness of the atomic layer deposition (ALD) Ni film. Unlike a conventional GS or graphene nanoribbon (GNR), the vertically formed GS is made without a graphene transfer and etching process. The process integration of the proposed GS FETs resembles that of currently commercialized vertical NAND flash memory with a design rule of less than 20 nm, implying practical usage of this formed GS for 3D advanced FET applications.
Publisher
WILEY-V C H VERLAG GMBH
Issue Date
2017-01
Language
English
Article Type
Article
Keywords

EDGES

Citation

SMALL, v.13, no.3

ISSN
1613-6810
DOI
10.1002/smll.201602373
URI
http://hdl.handle.net/10203/223101
Appears in Collection
EE-Journal Papers(저널논문)
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